FDMQ8403 datasheet, mosfet equivalent, ON Semiconductor

Features and benefits

* Max rDS(on) = 110 mW at VGS = 10 V, ID = 3 A
* Max rDS(on) = 175 mW at VGS = 6 V, ID = 2.4 A
* Substantial Efficiency Benefit in PD Solutions
* This Dev.

Application

* High−Efficiency Bridge Rectifiers MOSFET MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Symbol Rating Valu.

Description

This quad MOSFET solution provides ten−fold improvement in power dissipation over diode bridge. Features
* Max rDS(on) = 110 mW at VGS = 10 V, ID = 3 A
* Max rDS(on) = 175 mW at VGS = 6 V, ID = 2.4 A
* Substantial Efficiency Benefit in PD.

Image gallery