FDMQ8403 mosfet equivalent, n-channel mosfet.
* Max rDS(on) = 110 mW at VGS = 10 V, ID = 3 A
* Max rDS(on) = 175 mW at VGS = 6 V, ID = 2.4 A
* Substantial Efficiency Benefit in PD Solutions
* This Dev.
* High−Efficiency Bridge Rectifiers
MOSFET MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Symbol
Rating
Valu.
This quad MOSFET solution provides ten−fold improvement
in power dissipation over diode bridge.
Features
* Max rDS(on) = 110 mW at VGS = 10 V, ID = 3 A
* Max rDS(on) = 175 mW at VGS = 6 V, ID = 2.4 A
* Substantial Efficiency Benefit in PD.
Image gallery
TAGS