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FDME820NZT Datasheet, ON Semiconductor

FDME820NZT mosfet equivalent, n-channel mosfet.

FDME820NZT Avg. rating / M : 1.0 rating-13

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FDME820NZT Datasheet

Features and benefits


* Max RDS(ON) = 18 mW at VGS = 4.5 V, ID = 9 A
* Max RDS(ON) = 24 mW at VGS = 2.5 V, ID = 7.5 A
* Max RDS(ON) = 32 mW at VGS = 1.8 V, ID = 7 A
* Low Profi.

Application


* Li−lon Battery Pack
* Baseband Switch
* Load Switch
* DC−DC Conversion MOSFET MAXIMUM RATINGS (TA = 2.

Description

This Single N−Channel MOSFET has been designed using onsemi’s advanced Power Trench process to optimize the RDS(ON) @ VGS = 1.8 V on special MicroFETt leadframe. Features
* Max RDS(ON) = 18 mW at VGS = 4.5 V, ID = 9 A
* Max RDS(ON) = 24 mW at.

Image gallery

FDME820NZT Page 1 FDME820NZT Page 2 FDME820NZT Page 3

TAGS

FDME820NZT
N-Channel
MOSFET
FDME1023PZT
FDME1024NZT
FDME1034CZT
ON Semiconductor

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