FDME820NZT mosfet equivalent, n-channel mosfet.
* Max RDS(ON) = 18 mW at VGS = 4.5 V, ID = 9 A
* Max RDS(ON) = 24 mW at VGS = 2.5 V, ID = 7.5 A
* Max RDS(ON) = 32 mW at VGS = 1.8 V, ID = 7 A
* Low Profi.
* Li−lon Battery Pack
* Baseband Switch
* Load Switch
* DC−DC Conversion
MOSFET MAXIMUM RATINGS (TA = 2.
This Single N−Channel MOSFET has been designed using
onsemi’s advanced Power Trench process to optimize the RDS(ON) @ VGS = 1.8 V on special MicroFETt leadframe.
Features
* Max RDS(ON) = 18 mW at VGS = 4.5 V, ID = 9 A
* Max RDS(ON) = 24 mW at.
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