FDMC8854 mosfet equivalent, n-channel mosfet.
* Max rDS(on) = 5.7 mW at VGS = 10 V, ID = 15 A
* Max rDS(on) = 7.6 mW at VGS = 4.5 V, ID = 13 A
* Low Profile − 1 mm Max in Power 33
* This Device is Pb−.
Features
* Max rDS(on) = 5.7 mW at VGS = 10 V, ID = 15 A
* Max rDS(on) = 7.6 mW at VGS = 4.5 V, ID = 13 A
*.
This N−Channel MOSFET is a rugged gate version of onsemi’s
advanced Power Trench process. It has been optimized for power management applications.
Features
* Max rDS(on) = 5.7 mW at VGS = 10 V, ID = 15 A
* Max rDS(on) = 7.6 mW at VGS = 4.5 V,.
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