FDMC8882 datasheet, mosfet equivalent, ON Semiconductor

Features and benefits

* Max RDS(on) = 14.3 mW at VGS = 10 V, ID = 10.5 A
* Max RDS(on) = 22.5 mW at VGS = 4.5 V, ID = 8.3 A
* High Performance Technology for Extremely Low RDS(on) .

Application

common in Notebook Computers and Portable Battery Packs. Features
* Max RDS(on) = 14.3 mW at VGS = 10 V, ID = 10.5 A.

Description

This N−Channel MOSFET is produced using onsemi’s advanced POWETRENCH process that has been especially tailored to minimize the on−state resistance. This device is well suited for Power Management and load switching applications common in Notebook Com.

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