FDMC8882 Description
This N−Channel MOSFET is produced using onsemi’s advanced POWETRENCH process that has been especially tailored to minimize the on−state resistance. This device is well suited for Power Management and load switching applications mon in Notebook puters and Portable Battery Packs.
FDMC8882 Key Features
- Max RDS(on) = 14.3 mW at VGS = 10 V, ID = 10.5 A
- Max RDS(on) = 22.5 mW at VGS = 4.5 V, ID = 8.3 A
- High Performance Technology for Extremely Low RDS(on)
- Termination is Lead-Free
- RoHS pliant