FDMC8884 mosfet equivalent, n-channel power trench mosfet.
* Max rDS(on) = 19 mΩ at VGS = 10 V, ID = 9.0 A
* Max rDS(on) = 30 mΩ at VGS = 4.5 V, ID = 7.2 A
* High performance technology for extremely low rDS(on)
*.
common in Notebook Computers and Portable Battery Packs.
Application
* High side in DC - DC Buck Converters
* N.
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications co.
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