FDMC86340 mosfet equivalent, n-channel mosfet.
* Shielded Gate MOSFET Technology
* Max RDS(on) = 6.5 mW at VGS = 10 V, ID = 14 A
* Max RDS(on) = 8.5 mW at VGS = 8 V, ID = 12 A
* High Performance Techno.
* DC−DC Conversion
MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Symbol
Parameter
Ratings Unit
VDS Dra.
This N−Channel MOSFET is produced using onsemi’s advanced
POWETRENCH process that incorporates Shielded Gate technology. This process has been optimized for the on−state resistance and yet maintain superior switching performance.
Features
* Shiel.
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