FDMC86324 mosfet equivalent, n-channel mosfet.
* Max RDS(on) = 23 mW at VGS = 10 V, ID = 7 A
* Max RDS(on) = 37 mW at VGS = 6 V, ID = 4 A
* Low Profile − 1 mm Max in Power 33
* 100% UIL Tested
* Pb.
* DC−DC Conversion
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted.)
Symbol
Parameter
Value Unit
VDS.
This N−Channel MOSFET is produced using onsemi‘s advanced
POWERTRENCH process that has been especially tailored to minimize the on−state resistance and yet maintain superior switching performance.
Features
* Max RDS(on) = 23 mW at VGS = 10 V, ID .
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