FDMC8588 mosfet equivalent, n-channel mosfet.
* Max rDS(on) = 5.7 mW at VGS = 4.5 V, ID = 16.5 A
* State−of−the−art Switching Performance
* Lower Output Capacitance, Gate Resistance, and Gate Charge
Boost.
* High Side Switching for High End Computing
* High Power Density DC−DC Synchronous Buck Converter
DATA SHEET w.
This N−Channel MOSFET has been designed specifically to improve
the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate char.
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