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FDMC8554 - N-Channel Power Trench MOSFET

General Description

Max rDS(on) = 5mΩ at VGS = 10V, ID = 16.5A Max rDS(on) = 6.4mΩ at VGS = 4.5V, ID = 14A Low Profile - 1mm max in a MicroFET 3.3x3.3 mm

This N-Channel MOSFET is a rugged gate version of Fairchild Semiconductor‘s advanced Power Trench process.

Key Features

  • General.

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Full PDF Text Transcription (Reference)

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FDMC8554 N-Channel PowerTrench® MOSFET February 2007 FDMC8554 N-Channel Power Trench® MOSFET 20V, 16.5A, 5mΩ Features General Description „ Max rDS(on) = 5mΩ at VGS = 10V, ID = 16.5A „ Max rDS(on) = 6.4mΩ at VGS = 4.5V, ID = 14A „ Low Profile - 1mm max in a MicroFET 3.3x3.3 mm „ RoHS Compliant tm This N-Channel MOSFET is a rugged gate version of Fairchild Semiconductor‘s advanced Power Trench process. It has been optimized for switching performance and ultra low rdson. Application „ Synchronous rectifier „ ORing FET „ POL rectifier Bottom 7 8 D D D D Top 5 6 D D www.DataSheet4U.