* Max RDS(on) = 5 mW at VGS = 10 V, ID = 16.5 A
* Max RDS(on) = 6.4 mW at VGS = 4.5 V, ID = 14 A
* Low Profile − 1 mm Max in Power 33
* This Device is Pb−.

Features
* Max RDS(on) = 5 mW at VGS = 10 V, ID = 16.5 A
* Max RDS(on) = 6.4 mW at VGS = 4.5 V, ID = 14 A
*.

This N−Channel MOSFET is a rugged gate version of onsemi’s advanced Power Trench process. It has been optimized for power management applications. Features
* Max RDS(on) = 5 mW at VGS = 10 V, ID = 16.5 A
* Max RDS(on) = 6.4 mW at VGS = 4.5 V,.

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