FDMC3612 mosfet equivalent, n-channel mosfet.
* Max rDS(on) = 110 mW at VGS = 10 V, ID = 3.3 A
* Max rDS(on) = 122 mW at VGS = 6 V, ID = 3.0 A
* Low Profile − 1 mm Max in Power 33
* 100% UIL Tested
* DC − DC Conversion
* PSE Switch
DATA SHEET www.onsemi.com
8765
SSSG
1234
DDDD
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WDFN8 3.3x3.3.
This N−Channel MOSFET is produced using onsemi’s advanced
POWERTRENCH process that has been especially tailored to minimize the on−state resistance and yet maintain superior switching performance.
Features
* Max rDS(on) = 110 mW at VGS = 10 V, ID.
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