FDMA410NZ mosfet equivalent, n-channel mosfet.
* Max RDS(on) = 23 mW at VGS = 4.5 V, ID = 9.5 A
* Max RDS(on) = 29 mW at VGS = 2.5 V, ID = 8.0 A
* Max RDS(on) = 36 mW at VGS = 1.8 V, ID = 4.0 A
* Max R.
* Li−lon Battery Pack
* Baseband Switch
* Load Switch
* DC−DC Conversion
ABSOLUTE MAXIMUM RATINGS (TA =.
This Single N−Channel MOSFET has been designed using
onsemi’s advanced POWERTRENCH process to optimize the RDS(on) @ VGS = 1.5 V on special MicroFETt leadframe.
Features
* Max RDS(on) = 23 mW at VGS = 4.5 V, ID = 9.5 A
* Max RDS(on) = 29 mW a.
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