FDMA1024NZ mosfet equivalent, dual n-channel powertrench mosfet.
* Max rDS(on) = 54 mΩ at VGS = 4.5 V, ID = 5.0 A
* Max rDS(on) = 66 mΩ at VGS = 2.5 V, ID = 4.2 A
* Max rDS(on) = 82 mΩ at VGS = 1.8 V, ID = 2.3 A
* Max r.
It features two independent N-Channel MOSFETs with low on-state resistance for minimum conduction losses. The MicroFET .
This device is designed specifically as a single package solution for dual switching requirements in cellular handset and other ultra-portable applications. It features two independent N-Channel MOSFETs with low on-state resistance for minimum conduc.
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