FDMA410NZT mosfet equivalent, n-channel mosfet.
our new advanced 0.55 mm max 2 x 2 MLP package technology.
Features
* 0.55 mm max package height MicroFET 2 x 2 mm Package
* Max RDS(on) = 23 mW at VGS = 4.5 V, I.
* Li−lon Battery Pack
* Baseband Switch
* Load Switch
* DC−DC Conversion
* Mobile Device Switching
.
This Single N−Channel MOSFET has been designed using
onsemi’s advanced Power Trench process to optimize the RDS(on) @ VGS = 1.5 V on special MicroFETt leadframe.
This design is similar to the FDMA410NZ, however it features our new advanced 0.55 mm ma.
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