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FDG6316P Datasheet, ON Semiconductor

FDG6316P mosfet equivalent, p-channel mosfet.

FDG6316P Avg. rating / M : 1.0 rating-14

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FDG6316P Datasheet

Features and benefits


* −0.7 A, −12 V
* RDS(ON) = 270 mW @ VGS = −4.5 V
* RDS(ON) = 360 mW @ VGS = −2.5 V
* RDS(ON) = 650 mW @ VGS = −1.8 V
* Low Gate Charge
* High Per.

Application

Features
* −0.7 A, −12 V
* RDS(ON) = 270 mW @ VGS = −4.5 V
* RDS(ON) = 360 mW @ VGS = −2.5 V
* RDS(ON) .

Description

This P−Channel 1.8 V specified MOSFET uses onsemi’s advanced low voltage POWERTRENCH process. It has been optimized for battery power management applications. Features
* −0.7 A, −12 V
* RDS(ON) = 270 mW @ VGS = −4.5 V
* RDS(ON) = 360 mW @.

Image gallery

FDG6316P Page 1 FDG6316P Page 2 FDG6316P Page 3

TAGS

FDG6316P
P-Channel
MOSFET
ON Semiconductor

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