FDG6316P mosfet equivalent, p-channel mosfet.
* −0.7 A, −12 V
* RDS(ON) = 270 mW @ VGS = −4.5 V
* RDS(ON) = 360 mW @ VGS = −2.5 V
* RDS(ON) = 650 mW @ VGS = −1.8 V
* Low Gate Charge
* High Per.
Features
* −0.7 A, −12 V
* RDS(ON) = 270 mW @ VGS = −4.5 V
* RDS(ON) = 360 mW @ VGS = −2.5 V
* RDS(ON) .
This P−Channel 1.8 V specified MOSFET uses onsemi’s advanced
low voltage POWERTRENCH process. It has been optimized for battery power management applications.
Features
* −0.7 A, −12 V
* RDS(ON) = 270 mW @ VGS = −4.5 V
* RDS(ON) = 360 mW @.
Image gallery
TAGS