* −0.7 A, −12 V
* RDS(ON) = 270 mW @ VGS = −4.5 V
* RDS(ON) = 360 mW @ VGS = −2.5 V
* RDS(ON) = 650 mW @ VGS = −1.8 V
* Low Gate Charge
* High Per.

Features
* −0.7 A, −12 V
* RDS(ON) = 270 mW @ VGS = −4.5 V
* RDS(ON) = 360 mW @ VGS = −2.5 V
* RDS(ON) .

This P−Channel 1.8 V specified MOSFET uses onsemi’s advanced low voltage POWERTRENCH process. It has been optimized for battery power management applications. Features
* −0.7 A, −12 V
* RDS(ON) = 270 mW @ VGS = −4.5 V
* RDS(ON) = 360 mW @.

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