FDD6685 Description
This P−Channel MOSFET is a rugged gate version of ON Semiconductor’s advanced POWERTRENCH process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5 V 2 5V).
FDD6685 Key Features
- 40 A, -30 V
- RDS(ON) = 20 mW @ VGS = -10 V
- RDS(ON) = 30 mW @ VGS = -4.5 V
- Fast Switching Speed
- High Performance Trench Technology for Extremely Low RDS(ON)
- High Power and Current Handling Capability
- Qualified to AEC Q101
- This Device is Pb-Free and are RoHS pliant
- Rev. 3