FDD6685
Description
This P-Channel MOSFET is a rugged gate version of ON Semiconductor’s advanced POWERTRENCH process.
Key Features
- RDS(ON) = 20 mW @ VGS = -10 V
- RDS(ON) = 30 mW @ VGS = -4.5 V
- Fast Switching Speed
- High Performance Trench Technology for Extremely Low RDS(ON)
- High Power and Current Handling Capability
- Qualified to AEC Q101
