FDD3860 datasheet, mosfet equivalent, ON Semiconductor

Features and benefits

* Max rDS(on) = 36 mΩ at VGS = 10 V, ID = 5.9 A
* High Performance Trench Technology for Extremely Low rDS(on)
* 100% UIL Tested
* RoHS Compliant General.

Application

Applications
* DC-AC Conversion
* Synchronous Rectifier G S D DT O-P-2A5K2 (T O -25 2) D G S MOSFET Maximum.

Description

This N-Channel MOSFET is rugged gate version of ON Semiconductor‘s advanced Power Trench® process. This part is tailored for low rDS(on) and low Qg figure of merit, with avalanche ruggedness for a wide range of switching applications. Applications

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