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FDD3510H Datasheet, ON Semiconductor

FDD3510H mosfet equivalent, dual n & p-channel power mosfet.

FDD3510H Avg. rating / M : 1.0 rating-12

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FDD3510H Datasheet

Features and benefits

Q1: N-Channel
* Max rDS(on) = 80mΩ at VGS = 10V, ID = 4.3A
* Max rDS(on) = 88mΩ at VGS = 6V, ID = 4.1A Q2: P-Channel
* Max rDS(on) = 190mΩ at VGS = -10V, ID =.

Application


* Inverter
* H-Bridge D1/D2 D1 D2 G2 S2 G1 S1 Dual DPAK 4L G1 G2 S1 N-Channel S2 P-Channel MOSFET Maxim.

Description

These dual N and P- Channel enhancement mode Power MOSFETs are produced using ON Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize on -state resistance and yet maintain superior switching performance. Applica.

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FDD3510H Page 1 FDD3510H Page 2 FDD3510H Page 3

TAGS

FDD3510H
Dual
P-Channel
Power
MOSFET
FDD3570
FDD3580
FDD306P
ON Semiconductor

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