FDD3510H - Dual N & P-Channel Power MOSFET

ON Semiconductor

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Datasheet Details

Part number	FDD3510H
Manufacturer	ON Semiconductor
File Size	513.64 KB
Description	Dual N & P-Channel Power MOSFET
Datasheet	FDD3510H-ONSemiconductor.pdf

FDD3510H Product details

Description

These dual N and P- Channel enhancement mode Power MOSFETs are produced using ON Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize on -state resistance and yet maintain superior switching performance. Inverter H-Bridge D1/D2 D1 D2 G2 S2 G1 S1 Dual DPAK 4L G1 G2 S1 N-Channel S2 P-Channel MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol VDS VGS ID PD Parameter Drain to Source Voltage Gate to Source

Features

Q1: N-Channel.
Max rDS(on) = 80mΩ at VGS = 10V, ID = 4.3A.
Max rDS(on) = 88mΩ at VGS = 6V, ID = 4.1A Q2: P-Channel.
Max rDS(on) = 190mΩ at VGS = -10V, ID = -2.8A.
Max rDS(on) = 224mΩ at VGS = -4.5V, ID = -2.6A.
100% UIL Tested.
RoHS Compliant General.

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Published: Jan 23, 2023 |