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FDD3510H Datasheet Dual N & P-Channel Power MOSFET

Manufacturer: onsemi

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General Description

These dual N and P- Channel enhancement mode Power MOSFETs are produced using ON Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize on -state resistance and yet maintain superior switching performance.

Applications „ Inverter „ H-Bridge D1/D2 D1 D2 G2 S2 G1 S1 Dual DPAK 4L G1 G2 S1 N-Channel S2 P-Channel MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol VDS VGS ID PD Parameter Drain to Source Voltage Gate to Source Voltage Drain Current - Continuous - Continuous - Pulsed Power Dissipation for Single Operation EAS TJ, TSTG Single Pulse Avalanche Energy Operating and Storage Junction Temperature Range Thermal Characteristics TC = 25°C TA = 25°C TC = 25°C (Note 1) TA = 25°C (Note 1a) TA = 25°C (Note 1b) (Note 3) Q1 Q2 80 -80 ±20 ±20 13.9 -9.4 4.3 -2.8 20 -10 35 32 3.1 1.3 37 54 -55 to +150 Units V V A W mJ °C RθJC Thermal Resistance, Junction to Case, Single Operation for Q1 (Note 1) 3.5 RθJC Thermal Resistance, Junction to Case, Single Operation for Q2 (Note 1) 3.9 Package Marking and Ordering Information °C/W Device Marking FDD3510H Device FDD3510H Package TO-252-4L Reel Size 13” Tape Width 16mm Quantity 2500 units ©2008 Semiconductor Components Industries, LLC.

1 October-2017, Rev.

Overview

FDD3510H Dual N & P-Channel PowerTrench ® MOSFET FDD3510H Dual N & P-Channel PowerTrench® MOSFET N-Channel: 80V, 13.9A, 80mΩ P-Channel: -80V, -9.

Key Features

  • Q1: N-Channel.
  • Max rDS(on) = 80mΩ at VGS = 10V, ID = 4.3A.
  • Max rDS(on) = 88mΩ at VGS = 6V, ID = 4.1A Q2: P-Channel.
  • Max rDS(on) = 190mΩ at VGS = -10V, ID = -2.8A.
  • Max rDS(on) = 224mΩ at VGS = -4.5V, ID = -2.6A.
  • 100% UIL Tested.
  • RoHS Compliant General.

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