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FDD3510H - Dual N & P-Channel Power MOSFET

Datasheet Summary

Description

These dual N and P- Channel enhancement mode Power MOSFETs are produced using ON Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize on -state resistance and yet maintain superior switching performance.

Inverter H-Bridge D1/D2

Features

  • Q1: N-Channel.
  • Max rDS(on) = 80mΩ at VGS = 10V, ID = 4.3A.
  • Max rDS(on) = 88mΩ at VGS = 6V, ID = 4.1A Q2: P-Channel.
  • Max rDS(on) = 190mΩ at VGS = -10V, ID = -2.8A.
  • Max rDS(on) = 224mΩ at VGS = -4.5V, ID = -2.6A.
  • 100% UIL Tested.
  • RoHS Compliant General.

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Datasheet Details

Part number FDD3510H
Manufacturer ON Semiconductor
File Size 513.64 KB
Description Dual N & P-Channel Power MOSFET
Datasheet download datasheet FDD3510H Datasheet
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Full PDF Text Transcription

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FDD3510H Dual N & P-Channel PowerTrench ® MOSFET FDD3510H Dual N & P-Channel PowerTrench® MOSFET N-Channel: 80V, 13.9A, 80mΩ P-Channel: -80V, -9.4A, 190mΩ Features Q1: N-Channel „ Max rDS(on) = 80mΩ at VGS = 10V, ID = 4.3A „ Max rDS(on) = 88mΩ at VGS = 6V, ID = 4.1A Q2: P-Channel „ Max rDS(on) = 190mΩ at VGS = -10V, ID = -2.8A „ Max rDS(on) = 224mΩ at VGS = -4.5V, ID = -2.6A „ 100% UIL Tested „ RoHS Compliant General Description These dual N and P- Channel enhancement mode Power MOSFETs are produced using ON Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize on -state resistance and yet maintain superior switching performance.
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