FDD3510H mosfet equivalent, dual n & p-channel power mosfet.
Q1: N-Channel
* Max rDS(on) = 80mΩ at VGS = 10V, ID = 4.3A
* Max rDS(on) = 88mΩ at VGS = 6V, ID = 4.1A
Q2: P-Channel
* Max rDS(on) = 190mΩ at VGS = -10V, ID =.
* Inverter
* H-Bridge
D1/D2
D1
D2
G2 S2
G1 S1
Dual DPAK 4L
G1
G2
S1 N-Channel
S2 P-Channel
MOSFET Maxim.
These dual N and P- Channel enhancement mode Power MOSFETs are produced using ON Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize on -state resistance and yet maintain superior switching performance.
Applica.
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