FDD3510H Datasheet, ON Semiconductor

Q1: N-Channel „ Max rDS(on) = 80mΩ at VGS = 10V, ID = 4.3A „ Max rDS(on) = 88mΩ at VGS = 6V, ID = 4.1A Q2: P-Channel „ Max rDS(on) = 190mΩ at VGS = -10V, ID = -2.8A „ Max.

„ Inverter „ H-Bridge D1/D2 D1 D2 G2 S2 G1 S1 Dual DPAK 4L G1 G2 S1 N-Channel S2 P-Channel MOSFET Maximum Ratin.