FDD3510H
Key Features
- Max rDS(on) = 80mΩ at VGS = 10V, ID = 4.3A
- Max rDS(on) = 88mΩ at VGS = 6V, ID = 4.1A Q2: P-Channel
- Max rDS(on) = 190mΩ at VGS = -10V, ID = -2.8A
- Max rDS(on) = 224mΩ at VGS = -4.5V, ID = -2.6A
- 100% UIL Tested
- Part: FDD3510H
- Description: Dual N&P-Channel MOSFET
- Category: MOSFET
- Manufacturer: Fairchild Semiconductor
- Size: 451.23 KB