FDD3510H Datasheet | Fairchild Semiconductor

Features Q1: N-Channel - Max r DS(on) = 80mΩ at VGS = 10V, ID = 4.3A - Max r DS(on) = 88mΩ at VGS = 6V, ID = 4.1A Q2: P-Channel - Max r DS(on) = 190mΩ at VGS = -10V, ID = -2.8A - Max r DS(on) = 224mΩ at VGS = -4.5V, ID = -2.6A - 100% UIL Tested - Ro HS pliant N-Channel: 80V, 13.9A, 80mΩ P-Channel: -80V, -9.4A, 190mΩ General Description These dual N and P-Channel enhancement mode Power MOSFETs are produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. Applications - Inverter - H-Bridge D1 D1/D2 D2 G1 G2 S2 G1 S1 Dual DPAK 4L S1 N-Channel G2 S2 P-Channel MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol VDS VGS ID Parameter Drain to Source Voltage Gate to Source Voltage Drain Current - Continuous - Continuous - Pulsed Power Dissipation for Single Operation PD EAS TJ, TSTG Single Pulse Avalanche Energy Operating and Storage Junction Temperature Range TC = 25°C (Note 1) TA = 25°C (Note 1a) TA = 25°C (Note 1b) (Note 3) 37 TC = 25°C TA = 25°C Q1 80 ±20 13.9 4.3 20 35 3.1 1.3 54 m J °C -55 to +150 Q2 -80 ±20 -9.4 -2.8 -10 32 W A Units V V Thermal Characteristics RθJC RθJC Thermal Resistance, Junction to Case, Single Operation for Q1 Thermal Resistance, Junction to Case, Single Operation for Q2 (Note 1) (Note 1) 3.5 3.9 °C/W Package Marking and Ordering Information Device Marking FDD3510H Device FDD3510H Package TO-252-4L Reel Size 13” Tape Width 12mm Quantity 2500 units ©2008 Fairchild Semiconductor Corporation FDD3510H Rev.C .fairchildsemi. .Data Sheet.in FDD3510H Dual N & P-Channel Power Trench® MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted Symbol Parameter Test Conditions Type Min Typ Max Units Off Characteristics BVDSS ∆BVDSS ∆TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID =250µA, VGS = 0V...