FDD3510H Datasheet | Fairchild Semiconductor

Overview

• Max rDS(on) = 80mΩ at VGS = 10V, ID = 4.3A
• Max rDS(on) = 88mΩ at VGS = 6V, ID = 4.1A Q2: P-Channel
• Max rDS(on) = 190mΩ at VGS = -10V, ID = -2.8A
• Max rDS(on) = 224mΩ at VGS = -4.5V, ID = -2.6A
• 100% UIL Tested
• RoHS Compliant N-Channel: 80V, 13.9A, 80mΩ P-Channel: -80V, -9.4A, 190mΩ General Description These dual N and P-Channel enhancement mode Power MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.