Datasheet4U Logo Datasheet4U.com

FDD3510H - Dual N&P-Channel MOSFET

The FDD3510H by Fairchild Semiconductor is a Dual N&P-Channel MOSFET. Below is the official datasheet preview.

📥 Download Datasheet

Official preview page of the FDD3510H Dual N&P-Channel MOSFET datasheet (Fairchild Semiconductor).

FDD3510H Product details

Description

These dual N and P-Channel enhancement mode Power MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. Inverter H-Bridge D1 D1/D2 D2 G1 G2 S2 G1 S1 Dual DPAK 4L S1 N-Channel G2 S2 P-Channel MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol VDS VGS ID Parameter Drain to Source Voltage Gate to Source Vo

Features

📁 FDD3510H Similar Datasheet

  • FDD3680 - N-Channel MOSFET (ON Semiconductor)
  • FDD3682 - N-Channel MOSFET (INCHANGE)
  • FDD3682-F085 - N-Channel MOSFET (ON Semiconductor)
  • FDD3690 - N-Channel MOSFET (ON Semiconductor)
  • FDD3860 - N-Channel PowerTrench MOSFET (ON Semiconductor)
  • FDD3N50NZ - Power MOSFET (VBsemi)
  • FDD01 - DC-AC CONCERTER (Chinfa Electronics Ind)
  • FDD03-xxx - DC-DC Converter (Chinfa electronics)
Other Datasheets by Fairchild Semiconductor
Published: |