FDC6321C fet equivalent, dual n & p-channel digital fet.
* N−Channel 0.68 A, 25 V
RDS(ON) = 0.45 W @ VGS = 4.5 V
* P−Channel −0.46 A, −25 V
RDS(ON) = 1.1 W @ VGS = −4.5 V
* Very Low Level Gate Drive Requirements All.
as a replacement for digital transistors in load switching applications. Since bias resistors are not required this dual.
These dual N & P Channel logic level enhancement mode field
effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on−state resistance. This de.
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