FDC6320C fet equivalent, dual n & p channel digital fet.
N-Ch 25 V, 0.22 A, RDS(ON) = 5 Ω @ VGS= 2.7 V.
P-Ch 25 V, -0.12 A, RDS(ON) = 13 Ω @ VGS= -2.7 V.
Very low level gate drive requirements allowing direct operation in 3 V c.
as a replacement for bipolar digital transistors in load switching applications. Since bias resistors are not required, .
These dual N & P Channel logic level enhancement mode field effect transistors are produced using ON Semiconductor's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistanc.
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