* RDS(on) = 3.0 mW ( Typ.) @ VGS = 10 V, ID = 75 A
* Fast Switching Speed
* Low Gate Charge, QG = 89 nC ( Typ.)
* High Performance Trench Technology for E.

* Synchronous Rectification for ATX / Server / Telecom PSU
* Battery Protection Circuit
* Motor Drives and U.

This N−Channel MOSFET is produced using onsemi’s advance POWERTRENCH process that has been tailored to minimize the on−state resistance while maintaining superior switching performance. Features
* RDS(on) = 3.0 mW ( Typ.) @ VGS = 10 V, ID = 75 A .

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