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NXP Semiconductors Electronic Components Datasheet

PSMN050-80PS Datasheet

MOSFET

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PSMN050-80PS
N-channel 80 V 46 mstandard level MOSFET
Rev. 2 — 28 November 2011
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel MOSFET in TO220 package qualified to 175 °C. This product is
designed and qualified for use in a wide range of industrial, communications and domestic
equipment.
1.2 Features and benefits
High efficiency due to low switching
and conduction losses
Suitable for standard level gate drive
sources
1.3 Applications
DC-to-DC converters
Load switching
Motor control
Server power supplies
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
VDS drain-source voltage
ID drain current
Ptot total power dissipation
Static characteristics
Conditions
Tj 25 °C; Tj 175 °C
Tmb = 25 °C; VGS = 10 V; see Figure 1
Tmb = 25 °C; see Figure 2
Min Typ Max Unit
- - 80 V
- - 22 A
- - 56 W
RDSon
drain-source on-state resistance VGS = 10 V; ID = 10 A; Tj = 25 °C
Dynamic characteristics
[1] -
37 46 m
QGD gate-drain charge
VGS = 10 V; ID = 25 A; VDS = 40 V;
see Figure 14; see Figure 15
- 2.3 - nC
[1] Measured 3 mm from package.


NXP Semiconductors Electronic Components Datasheet

PSMN050-80PS Datasheet

MOSFET

No Preview Available !

NXP Semiconductors
PSMN050-80PS
N-channel 80 V 46 mstandard level MOSFET
2. Pinning information
Table 2.
Pin
1
2
3
mb
Pinning information
Symbol Description
G gate
D drain
S source
D mounting base; connected to drain
Simplified outline
mb
Graphic symbol
D
G
mbb076 S
3. Ordering information
123
SOT78 (TO-220AB)
Table 3. Ordering information
Type number
Package
Name
PSMN050-80PS
TO-220AB
4. Limiting values
Description
plastic single-ended package; heatsink mounted; 1 mounting
hole; 3-lead TO-220AB
Version
SOT78
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
VDGR
VGS
ID
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
IDM peak drain current
Ptot total power dissipation
Tstg storage temperature
Tj junction temperature
Source-drain diode
Conditions
Tj 25 °C; Tj 175 °C
Tj 25 °C; Tj 175 °C; RGS = 20 k
VGS = 10 V; Tmb = 100 °C; see Figure 1
VGS = 10 V; Tmb = 25 °C; see Figure 1
pulsed; tp 10 µs; Tmb = 25 °C; see Figure 3
Tmb = 25 °C; see Figure 2
IS source current
ISM peak source current
Avalanche ruggedness
Tmb = 25 °C
pulsed; tp 10 µs; Tmb = 25 °C
EDS(AL)S
non-repetitive drain-source VGS = 10 V; Tj(init) = 25 °C; ID = 22 A;
avalanche energy
Vsup 80 V; RGS = 50 ; unclamped
Min Max Unit
- 80 V
- 80 V
-20 20 V
- 16 A
- 22 A
- 88 A
- 56 W
-55 175 °C
-55 175 °C
- 22 A
- 88 A
- 18 mJ
PSMN050-80PS
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 28 November 2011
© NXP B.V. 2011. All rights reserved.
2 of 14


Part Number PSMN050-80PS
Description MOSFET
Maker NXP Semiconductors
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