PSMN057-200B mosfet equivalent, n-channel mosfet.
* Higher operating power due to low thermal resistance
* Low conduction losses due to low on-state resistance
* Suitable for high frequency applications due t.
only.
2. Features and benefits
* Higher operating power due to low thermal resistance
* Low conduction losses d.
SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.
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