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nexperia

PSMN057-200B Datasheet Preview

PSMN057-200B Datasheet

N-channel MOSFET

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PSMN057-200B
N-channel TrenchMOS SiliconMAX standard level FET
15 August 2013
Product data sheet
1. General description
SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in
a plastic package using TrenchMOS technology. This product is designed and qualified
for use in computing, communications, consumer and industrial applications only.
2. Features and benefits
Higher operating power due to low thermal resistance
Low conduction losses due to low on-state resistance
Suitable for high frequency applications due to fast switching characteristics
3. Applications
DC-to-DC converters
Switched-mode power supplies
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C
ID
drain current
Tmb = 25 °C
Ptot total power dissipation
Static characteristics
RDSon
drain-source on-state VGS = 10 V; ID = 17 A; Tj = 25 °C
resistance
Dynamic characteristics
QGD
gate-drain charge
VGS = 10 V; ID = 39 A; VDS = 160 V;
Tj = 25 °C
Min Typ Max Unit
- - 200 V
- - 39 A
- - 250 W
- 41 57 mΩ
- 37 50 nC




nexperia

PSMN057-200B Datasheet Preview

PSMN057-200B Datasheet

N-channel MOSFET

No Preview Available !

Nexperia
PSMN057-200B
N-channel TrenchMOS SiliconMAX standard level FET
5. Pinning information
Table 2. Pinning information
Pin Symbol Description
Simplified outline
1 G gate
mb
2 D drain
3 S source
mb D
mounting base; connected to
drain
2
13
D2PAK (SOT404)
Graphic symbol
D
G
mbb076 S
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
PSMN057-200B
D2PAK
Description
Version
plastic single-ended surface-mounted package (D2PAK); 3 leads SOT404
(one lead cropped)
7. Marking
Table 4. Marking codes
Type number
PSMN057-200B
Marking code
PSMN057-200B
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C
VDGR
drain-gate voltage
Tj ≥ 25 °C; Tj ≤ 175 °C; RGS = 20 kΩ
VGS gate-source voltage
ID drain current
Tmb = 100 °C
Tmb = 25 °C
IDM peak drain current
pulsed; Tmb = 25 °C
Ptot
total power dissipation
Tmb = 25 °C
Tstg storage temperature
Tj junction temperature
PSMN057-200B
All information provided in this document is subject to legal disclaimers.
Product data sheet
15 August 2013
Min Max Unit
- 200 V
- 200 V
-20 20
V
- 27.5 A
- 39 A
- 156 A
- 250 W
-55 175 °C
-55 175 °C
© Nexperia B.V. 2017. All rights reserved
2 / 11


Part Number PSMN057-200B
Description N-channel MOSFET
Maker nexperia
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PSMN057-200B Datasheet PDF






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