900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






Philips

PSMN057-200P Datasheet Preview

PSMN057-200P Datasheet

N-channel TrenchMOS transistor

No Preview Available !

Philips Semiconductors
Product specification
N-channel TrenchMOStransistor
PSMN057-200P
FEATURES
’Trench’ technology
• Very low on-state resistance
• Fast switching
• Low thermal resistance
SYMBOL
d
g
s
QUICK REFERENCE DATA
VDSS = 200 V
ID = 39 A
RDS(ON) 57 m
GENERAL DESCRIPTION
SiliconMAX products use the latest Philips Trench technology to achieve the lowest possible on-state resistance in
each package at each voltage rating.
Applications:-
• d.c. to d.c. converters
• switched mode power supplies
The PSMN060-200P is supplied in the SOT78 (TO220AB) conventional leaded package.
PINNING
SOT78 (TO220AB)
PIN DESCRIPTION
1 gate
tab
2 drain
3 source
tab drain
1 23
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
VDSS
VDGR
VGS
ID
IDM
PD
Tj, Tstg
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Continuous drain current
Pulsed drain current
Total power dissipation
Operating junction and
storage temperature
Tj = 25 ˚C to 175˚C
Tj = 25 ˚C to 175˚C; RGS = 20 k
Tmb = 25 ˚C
Tmb = 100 ˚C
Tmb = 25 ˚C
Tmb = 25 ˚C
MIN.
-
-
-
-
-
-
-
- 55
MAX.
200
200
± 20
39
27.5
156
250
175
UNIT
V
V
V
A
A
A
W
˚C
June 2000
1
Rev 1.000




Philips

PSMN057-200P Datasheet Preview

PSMN057-200P Datasheet

N-channel TrenchMOS transistor

No Preview Available !

Philips Semiconductors
Product specification
N-channel TrenchMOStransistor
PSMN057-200P
AVALANCHE ENERGY LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
EAS
Non-repetitive avalanche
Unclamped inductive load, IAS = 35 A;
energy
tp = 100 µs; Tj prior to avalanche = 25˚C;
VDD 50 V; RGS = 50 ; VGS = 10 V;
IAS Non-repetitive avalanche
current
MIN.
-
MAX.
300
UNIT
mJ
- 35 A
THERMAL RESISTANCES
SYMBOL PARAMETER
Rth j-mb
Rth j-a
Thermal resistance junction
to mounting base
Thermal resistance junction
to ambient
CONDITIONS
in free air
TYP.
-
60
MAX.
0.6
-
UNIT
K/W
K/W
ELECTRICAL CHARACTERISTICS
Tj= 25˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
V(BR)DSS
VGS(TO)
RDS(ON)
IGSS
IDSS
Qg(tot)
Qgs
Qgd
td on
tr
td off
tf
Ld
Ld
Ls
Drain-source breakdown
voltage
Gate threshold voltage
Drain-source on-state
resistance
Gate source leakage current
Zero gate voltage drain
current
Total gate charge
Gate-source charge
Gate-drain (Miller) charge
VGS = 0 V; ID = 0.25 mA;
VDS = VGS; ID = 1 mA
VGS = 10 V; ID = 17 A
VGS = ±10 V; VDS = 0 V
VDS = 200 V; VGS = 0 V;
Tj = -55˚C
Tj = 175˚C
Tj = -55˚C
Tj = 175˚C
Tj = 175˚C
ID = 39 A; VDD = 160 V; VGS = 10 V
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
VDD = 100 V; RD = 2.7 ;
VGS = 10 V; RG = 5.6
Resistive load
Internal drain inductance
Internal drain inductance
Internal source inductance
Measured from tab to centre of die
Measured from drain lead to centre of die
Measured from source lead to source
bond pad
Ciss Input capacitance
Coss Output capacitance
Crss Feedback capacitance
VGS = 0 V; VDS = 25 V; f = 1 MHz
MIN. TYP. MAX. UNIT
200 -
-V
178 -
-V
2.0 3.0 4.0 V
1.0 -
-V
- - 6V
- 41 57 m
- - 165 m
- 2 100 nA
- 0.03 10 µA
- - 500 µA
- 96 - nC
- 13 - nC
- 37 50 nC
- 18 -
- 58 -
- 105 -
- 78 -
ns
ns
ns
ns
- 3.5 - nH
- 4.5 - nH
- 7.5 - nH
- 3750 -
- 385 -
- 180 -
pF
pF
pF
June 2000
2
Rev 1.000


Part Number PSMN057-200P
Description N-channel TrenchMOS transistor
Maker Philips
PDF Download

PSMN057-200P Datasheet PDF






Similar Datasheet

1 PSMN057-200B N-channel TrenchMOS transistor
Philips
2 PSMN057-200B N-channel MOSFET
nexperia
3 PSMN057-200P N-channel TrenchMOS transistor
Philips
4 PSMN057-200P N-channel MOSFET
nexperia





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z



Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy