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PSMN057-200B - N-channel MOSFET

Description

SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.

This product is designed and qualified for use in computing, communications, consumer and industrial applications only.

2.

Features

  • Higher operating power due to low thermal resistance.
  • Low conduction losses due to low on-state resistance.
  • Suitable for high frequency.

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Full PDF Text Transcription

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PSMN057-200B N-channel TrenchMOS SiliconMAX standard level FET 15 August 2013 Product data sheet 1. General description SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 2. Features and benefits • Higher operating power due to low thermal resistance • Low conduction losses due to low on-state resistance • Suitable for high frequency applications due to fast switching characteristics 3. Applications • DC-to-DC converters • Switched-mode power supplies 4. Quick reference data Table 1.
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