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NXP Semiconductors Electronic Components Datasheet

PSMN038-100K Datasheet

N-Channel MOSFET

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PSMN038-100K
N-channel enhancement mode field-effect transistor
Rev. 01 — 16 January 2001
Product specification
1. Description
SiliconMAX™1 products use the latest Philips TrenchMOS™2 technology to achieve
the lowest possible on-state resistance in a SOT96-1 (SO8) package.
Product availability:
PSMN038-100K in SOT96-1 (SO8).
2. Features
s Very low on-state resistance
s Fast switching
s TrenchMOS™ technology.
3. Applications
s DC to DC convertor
s Computer motherboards
s Switch mode power supplies.
c
c
4. Pinning information
Table 1: Pinning - SOT96-1, simplified outline and symbol
Pin Description
Simplified outline
1,2,3
4
source (s)
gate (g)
85
5,6,7,8
drain (d)
1
Top view
4
MBK187
SOT96-1 (SO8)
Symbol
d
g
MBB076
s
1. SiliconMAX is a trademark of Royal Philips Electronics.
2. TrenchMOS is a trademark of Royal Philips Electronics.


NXP Semiconductors Electronic Components Datasheet

PSMN038-100K Datasheet

N-Channel MOSFET

No Preview Available !

Philips Semiconductors
www.DataSheet4U.com
PSMN038-100K
N-channel enhancement mode field-effect transistor
5. Quick reference data
Table 2: Quick reference data
Symbol Parameter
VDS
ID
Ptot
Tj
RDSon
drain-source voltage (DC)
drain current (DC)
total power dissipation
junction temperature
drain-source on-state resistance
6. Limiting values
Conditions
Tj = 25 to 150 °C
Tsp = 80 °C; Figure 2 and 3
Tsp = 80 °C; Figure 1
VGS = 10 V; ID = 5.2 A; Tj = 25 °C
Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
VDS drain-source voltage (DC)
Tj = 25 to 150 °C
VGS gate-source voltage (DC)
ID drain current (DC)
IDM peak drain current
Ptot total power dissipation
Tsp = 80 °C
Tsp = 25 °C; pulsed; tp 10 µs
Tsp = 80 °C
Tstg storage temperature
Tj operating junction temperature
Source-drain diode
IS source (diode forward) current (DC) Tsp = 80 °C
ISM peak source (diode forward) current Tsp = 25 °C; pulsed; tp 10 µs
Typ Max Unit
100 V
6.3 A
3.5 W
150 °C
33 38 m
Min Max Unit
100 V
− ±20 V
6.3 A
50 A
3.5 W
55 +150 °C
55 +150 °C
3.1 A
50 A
9397 750 07897
Product specification
Rev. 01 — 16 January 2001
© Philips Electronics N.V. 2001. All rights reserved.
2 of 13


Part Number PSMN038-100K
Description N-Channel MOSFET
Maker NXP Semiconductors
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PSMN038-100K Datasheet PDF






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