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PSMN038-100YL - N-channel MOSFET

General Description

Logic level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in LFPAK56 package.

This product has been designed and qualified for use in a wide range of industrial, communications and domestic equipment.

2.

Key Features

  • High efficiency due to low switching and conduction losses.
  • Suitable for logic level gate drive.
  • LFPAK56 package is footprint compatible with other Power-SO8 types.
  • Qualified to 175 °C 3.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PSMN038-100YL N-channel 100 V 37.5 mΩ logic level MOSFET in LFPAK56 1 May 2013 Product data sheet 1. General description Logic level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in LFPAK56 package. This product has been designed and qualified for use in a wide range of industrial, communications and domestic equipment. 2. Features and benefits • High efficiency due to low switching and conduction losses • Suitable for logic level gate drive • LFPAK56 package is footprint compatible with other Power-SO8 types • Qualified to 175 °C 3. Applications • DC-to-DC converters • Load switch • TV power supplies 4. Quick reference data Table 1.