PSMN038-100YL Datasheet | NXP Semiconductors

description Logic level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in LFPAK56 package. This product has been designed and qualified for use in a wide range of industrial, munications and domestic equipment. 2. Features and benefits - High efficiency due to low switching and conduction losses - Suitable for logic level gate drive - LFPAK56 package is footprint patible with other Power-SO8 types - Qualified to 175 °C 3. Applications - DC-to-DC converters - Load switch - TV power supplies 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C ID drain current VGS = 10 V; Tmb = 25 °C; Fig. 1 Ptot total power dissipation Tmb = 25 °C; Fig. 2 Static characteristics RDSon drain-source on-state VGS = 10 V; ID = 5 A; Tj = 175 °C; resistance Fig. 13; Fig. 12 VGS = 10 V; ID = 5 A; Tj = 25 °C; Fig. 12 Dynamic characteristics QG(tot) total gate charge VGS = 5 V; ID = 5 A; VDS = 80 V; Tj = 25 °C; Fig. 14; Fig. 15 QGD gate-drain charge VGS = 10 V; ID = 5 A; VDS = 80 V; Tj = 25 °C; Fig. 14; Fig. 15 Min Typ Max Unit - - 100 V - - 30 A - - 94.9 W - - 103.5 mΩ - 30.2 37.5 mΩ - 21.6 - n C - 8.3 - n...