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NXP Semiconductors Electronic Components Datasheet

PSMN038-100YL Datasheet

N-channel MOSFET

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PSMN038-100YL
N-channel 100 V 37.5 mΩ logic level MOSFET in LFPAK56
1 May 2013
Product data sheet
1. General description
Logic level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in
LFPAK56 package. This product has been designed and qualified for use in a wide range
of industrial, communications and domestic equipment.
2. Features and benefits
High efficiency due to low switching and conduction losses
Suitable for logic level gate drive
LFPAK56 package is footprint compatible with other Power-SO8 types
Qualified to 175 °C
3. Applications
DC-to-DC converters
Load switch
TV power supplies
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C
ID
drain current
VGS = 10 V; Tmb = 25 °C; Fig. 1
Ptot total power dissipation Tmb = 25 °C; Fig. 2
Static characteristics
RDSon
drain-source on-state VGS = 10 V; ID = 5 A; Tj = 175 °C;
resistance
Fig. 13; Fig. 12
VGS = 10 V; ID = 5 A; Tj = 25 °C; Fig. 12
Dynamic characteristics
QG(tot)
total gate charge
VGS = 5 V; ID = 5 A; VDS = 80 V;
Tj = 25 °C; Fig. 14; Fig. 15
QGD
gate-drain charge
VGS = 10 V; ID = 5 A; VDS = 80 V;
Tj = 25 °C; Fig. 14; Fig. 15
Min Typ Max Unit
- - 100 V
- - 30 A
- - 94.9 W
- - 103.5 mΩ
- 30.2 37.5 mΩ
- 21.6 - nC
- 8.3 - nC
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NXP Semiconductors Electronic Components Datasheet

PSMN038-100YL Datasheet

N-channel MOSFET

No Preview Available !

NXP Semiconductors
PSMN038-100YL
N-channel 100 V 37.5 mΩ logic level MOSFET in LFPAK56
Symbol
Parameter
Avalanche ruggedness
EDS(AL)S
non-repetitive drain-
source avalanche
energy
Conditions
ID = 30 A; Vsup ≤ 100 V; RGS = 50 Ω;
VGS = 10 V; Tj(init) = 25 °C; unclamped;
Fig. 3
Min Typ Max Unit
- - 45.1 mJ
5. Pinning information
Table 2. Pinning information
Pin Symbol Description
Simplified outline
1 S source
mb
2 S source
3 S source
4G
mb D
gate
mounting base; connected to
drain
1234
LFPAK56; Power-
SO8 (SOT669)
Graphic symbol
D
G
mbb076 S
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
PSMN038-100YL
LFPAK56;
Power-SO8
Description
Plastic single-ended surface-mounted package (LFPAK56;
Power-SO8); 4 leads
Version
SOT669
7. Marking
Table 4. Marking codes
Type number
PSMN038-100YL
Marking code
038100
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C
VDGR
drain-gate voltage
RGS = 20 kΩ
VGS gate-source voltage
ID
PSMN038-100YL
drain current
Tmb = 25 °C; VGS = 10 V; Fig. 1
All information provided in this document is subject to legal disclaimers.
Product data sheet
1 May 2013
Min Max Unit
- 100 V
- 100 V
-20 20
V
- 30 A
© NXP B.V. 2013. All rights reserved
2 / 13


Part Number PSMN038-100YL
Description N-channel MOSFET
Maker NXP
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PSMN038-100YL Datasheet PDF






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