Datasheet4U Logo Datasheet4U.com

PSMN038-100YL - N-channel MOSFET

General Description

Logic level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in LFPAK56 package.

This product has been designed and qualified for use in a wide range of industrial, communications and domestic equipment.

2.

Key Features

  • High efficiency due to low switching and conduction losses.
  • Suitable for logic level gate drive.
  • LFPAK56 package is footprint compatible with other Power-SO8 types.
  • Qualified to 175 °C 3.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
PSMN038-100YL N-channel MOSFET nexperia
PSMN038-100K N-Channel MOSFET NXP Semiconductors
PSMN038 N-channel enhancement mode field-effect transistor Philips
PSMN030-150B N-channel TrenchMOS transistor Philips
PSMN030-150P N-channel TrenchMOS transistor Philips

Other Datasheets by NXP Semiconductors

Part Number Description
PSMN008-75P N-Channel MOSFET
PSMN010-30MLD N-channel MOSFET
PSMN011-60ML N-channel MOSFET
PSMN011-60MS N-channel MOSFET
PSMN013-100ES N-channel 100V 13.9mOhm Standard Level MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
LFPAK56 PSMN038-100YL N-channel 100 V 37.5 mΩ logic level MOSFET in LFPAK56 1 May 2013 Product data sheet 1. General description Logic level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in LFPAK56 package. This product has been designed and qualified for use in a wide range of industrial, communications and domestic equipment. 2. Features and benefits • High efficiency due to low switching and conduction losses • Suitable for logic level gate drive • LFPAK56 package is footprint compatible with other Power-SO8 types • Qualified to 175 °C 3. Applications • DC-to-DC converters • Load switch • TV power supplies 4. Quick reference data Table 1.