PMWD22XN fet equivalent, dual n-channel utrenchmos extremely low level fet.
s Low threshold voltage s Fast switching s Common drain
1.3 Applications
s Portable appliances s Battery management
1.4 Quick reference data
s VDS ≤ 20 V s RDSon ≤ 26 m.
s Portable appliances s Battery management
1.4 Quick reference data
s VDS ≤ 20 V s RDSon ≤ 26 mΩ s ID ≤ 9.2 A s QGD = 2.
Dual common drain N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.
1.2 Features
s Low threshold voltage s Fast switching s Common drain
1.3 Applications
s Portable appliances s Battery manage.
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