logo

PMWD18UN Datasheet, NXP Semiconductors

PMWD18UN fet equivalent, dual n-channel utrenchmos ultra low level fet.

PMWD18UN Avg. rating / M : 1.0 rating-11

datasheet Download (Size : 118.90KB)

PMWD18UN Datasheet

Features and benefits

s Surface mounted package s Very low threshold s Low profile s Fast switching. 1.3 Applications s Portable appliances s Battery management s PCMCIA cards s Load switching.

Application

s Portable appliances s Battery management s PCMCIA cards s Load switching. 1.4 Quick reference data s VDS ≤ 30 V s Pto.

Description

Dual common drain N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. 1.2 Features s Surface mounted package s Very low threshold s Low profile s Fast switching. 1.3 Applications s Portable appliances .

Image gallery

PMWD18UN Page 1 PMWD18UN Page 2 PMWD18UN Page 3

TAGS

PMWD18UN
Dual
N-channel
uTrenchMOS
ultra
low
level
FET
NXP Semiconductors

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts