PMWD20XN
PMWD20XN is Dual N-channel uTrenchMOS extremely low level FET manufactured by NXP Semiconductors.
Rev. 02
- 26 April 2005
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Dual N-channel µTrenchMOS™ extremely low level FET
Product data sheet
1. Product profile
1.1 General description
Dual mon drain N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS™ technology.
1.2 Features s Surface-mounted package s Extremely low threshold voltage s Low profile s Fast switching
1.3 Applications s Portable appliances s Battery management
1.4 Quick reference data s VDS ≤ 20 V s Ptot ≤ 4.2 W s ID ≤ 10.4 A s RDSon ≤ 24 mΩ
2. Pinning information
Table 1: Pin 1, 8 2, 3 4 5 6, 7 Pinning Description drain (D) source1 (S1) gate1 (G1) gate2 (G2) source2 (S2)
G1 S1 G2 S2...
