PMWD20XN fet equivalent, dual n-channel utrenchmos extremely low level fet.
s Surface-mounted package s Extremely low threshold voltage s Low profile s Fast switching
1.3 Applications
s Portable appliances s Battery management
1.4 Quick referenc.
s Portable appliances s Battery management
1.4 Quick reference data
s VDS ≤ 20 V s Ptot ≤ 4.2 W s ID ≤ 10.4 A s RDSon ≤.
Dual common drain N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS™ technology.
1.2 Features
s Surface-mounted package s Extremely low threshold voltage s Low profile s Fast switching
1.3 Applications
s P.
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