PMDPB80XP datasheet, mosfet equivalent, NXP Semiconductors

Features and benefits

* 1.8 V RDSon rated for low voltage gate drive
* Trench MOSFET technology
* Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm
* Exposed d.

Application

* Charging switch for portable devices
* DC/DC converters
* Small brushless DC motor drive
* Power manag.

Description

Dual P-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits
* 1.8 V RDSon rated for l.

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