logo

PMDPB38UNE Datasheet, NXP Semiconductors

PMDPB38UNE mosfet equivalent, 20v dual n-channel trench mosfet.

PMDPB38UNE Avg. rating / M : 1.0 rating-11

datasheet Download

PMDPB38UNE Datasheet

Features and benefits


* Very fast switching
* Trench MOSFET technology
* Leadless medium power SMD plastic package: 2 × 2 × 0.6 mm
* Exposed drain pad for excellent thermal con.

Application


* Charging switch for portable devices
* DC-to-DC converters
* Small brushless DC motor drive
* Power ma.

Description

Dual N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits
* Very fast switching
* Trenc.

Image gallery

PMDPB38UNE Page 1 PMDPB38UNE Page 2 PMDPB38UNE Page 3

TAGS

PMDPB38UNE
20V
dual
N-channel
Trench
MOSFET
PMDPB30XN
PMDPB1S6P01
PMDPB28UN
NXP Semiconductors

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts