PMDPB85UPE - dual P-channel MOSFET

Nexperia

General Description

Dual small-signal P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Key Features

Low threshold voltage.
Very fast switching.
Trench MOSFET technology.
2 kV ElectroStatic Discharge (ESD) protection 1.3.

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PMDPB85UPE dual p-channel mosfet by Nexperia - Datasheet Preview

Datasheet Details

Part number	PMDPB85UPE
Manufacturer	Nexperia
File Size	1.44 MB
Description	dual P-channel MOSFET
Datasheet	PMDPB85UPE Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PMDPB85UPE 20 V dual P-channel Trench MOSFET Rev. 1 — 20 June 2012 Product data sheet 1. Product profile 1.1 General description Dual small-signal P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits  Low threshold voltage  Very fast switching  Trench MOSFET technology  2 kV ElectroStatic Discharge (ESD) protection 1.3 Applications  Relay driver  High-speed line driver  High-side load switch  Switching circuits 1.4 Quick reference data Table 1.