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nexperia

PMDPB85UPE Datasheet Preview

PMDPB85UPE Datasheet

dual P-channel MOSFET

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PMDPB85UPE
20 V dual P-channel Trench MOSFET
Rev. 1 — 20 June 2012
Product data sheet
1. Product profile
1.1 General description
Dual small-signal P-channel enhancement mode Field-Effect Transistor (FET) in a
leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic
package using Trench MOSFET technology.
1.2 Features and benefits
Low threshold voltage
Very fast switching
Trench MOSFET technology
2 kV ElectroStatic Discharge (ESD)
protection
1.3 Applications
Relay driver
High-speed line driver
High-side load switch
Switching circuits
1.4 Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Min Typ Max Unit
Per transistor
VDS drain-source voltage
VGS gate-source voltage
ID drain current
Static characteristics (per transistor)
Tj = 25 °C
VGS = -4.5 V; Tamb = 25 °C; t 5 s
--
-8 -
[1] -
-
-20 V
8V
-3.7 A
RDSon
drain-source on-state VGS = -4.5 V; ID = -1.3 A; Tj = 25 °C
resistance
- 82 103 m
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2.




nexperia

PMDPB85UPE Datasheet Preview

PMDPB85UPE Datasheet

dual P-channel MOSFET

No Preview Available !

Nexperia
PMDPB85UPE
20 V dual P-channel Trench MOSFET
2. Pinning information
Table 2.
Pin
1
2
3
4
5
6
7
8
Pinning information
Symbol Description
S1 source TR1
G1 gate TR1
D2 drain TR2
S2 source TR2
G2 gate TR2
D1 drain TR1
D1 drain TR1
D2 drain TR2
3. Ordering information
Simplified outline
654
Graphic symbol
D1
D2
78
123
Transparent top view
DFN2020-6 (SOT1118)
G1
G2
S1 S2
017aaa260
Table 3. Ordering information
Type number
Package
Name
PMDPB85UPE
DFN2020-6
Description
plastic thermal enhanced ultra thin small outline package;
no leads; 6 terminals
4. Marking
Version
SOT1118
Table 4. Marking codes
Type number
PMDPB85UPE
5. Limiting values
Marking code
2C
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Per transistor
VDS drain-source voltage Tj = 25 °C
VGS gate-source voltage
ID drain current
VGS = -4.5 V; Tamb = 25 °C; t 5 s
VGS = -4.5 V; Tamb = 25 °C
VGS = -4.5 V; Tamb = 100 °C
IDM peak drain current
Tamb = 25 °C; single pulse; tp 10 µs
Ptot
total power dissipation
Tamb = 25 °C
Source-drain diode
IS source current
PMDPB85UPE
Product data sheet
Tsp = 25 °C
Tamb = 25 °C
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 20 June 2012
[1]
[1]
[1]
[2]
[1]
[1]
Min Max Unit
- -20 V
-8 8
V
- -3.7 A
- -2.9 A
- -1.8 A
- -11.6 A
- 515 mW
- 1170 mW
- 8330 mW
- -1.2 A
© Nexperia B.V. 2017. All rights reserved
2 of 15


Part Number PMDPB85UPE
Description dual P-channel MOSFET
Maker nexperia
Total Page 15 Pages
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