PBSS304NX transistor equivalent, npn low vcesat breakthrough in small signal (biss) transistor.
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* Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC Hi.
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* High-voltage DC-to-DC conversion High-voltage MOSFET gate driving High-voltage motor contr.
NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS304PX.
1.2 Features
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* Low collector-emitter sat.
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