Datasheet4U Logo Datasheet4U.com

PBSS304NX-Q - 4.7A NPN low VCEsat transistor

Description

NPN low VCEsat transistor in a SOT89 (SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package.

2.

Features

  • Low collector-emitter saturation voltage VCEsat.
  • High collector current capability IC and ICM.
  • High collector current gain (hFE) at high IC.
  • High efficiency due to less heat generation.
  • Smaller required Printed-Circuit Board (PCB) area than for conventional transistors.
  • Qualified according to AEC-Q101 and recommended for use in automotive.

📥 Download Datasheet

Datasheet Details

Part number PBSS304NX-Q
Manufacturer Nexperia
File Size 300.24 KB
Description 4.7A NPN low VCEsat transistor
Datasheet download datasheet PBSS304NX-Q Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
PBSS304NX NPN low VCEsat Breakthrough In Small Signal (BISS) transistor NXP Semiconductors
PBSS304ND 3A NPN transistor NXP
PBSS304NZ 5.2A NPN transistor NXP
PBSS304PD PNP Transistor NXP
PBSS301ND 4A NPN transistor NXP

Other Datasheets by Nexperia

Part Number Description
PBSS304PX PNP Transistor
PBSS304PZ PNP Transistor
PBSS301NX 5.3A NPN transistor
PBSS301NZ 5.8A NPN transistor
PBSS301PX PNP Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
PBSS304NX-Q 60 V, 4.7 A NPN low VCEsat transistor 9 November 2023 Product data sheet 1. General description NPN low VCEsat transistor in a SOT89 (SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS304PX-Q 2. Features and benefits • Low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • High collector current gain (hFE) at high IC • High efficiency due to less heat generation • Smaller required Printed-Circuit Board (PCB) area than for conventional transistors • Qualified according to AEC-Q101 and recommended for use in automotive applications 3. Applications • High-voltage DC-to-DC conversion • High-voltage MOSFET gate driving • High-voltage motor control • High-voltage power switches (e.g.
Published: |