PBSS304NX - NPN low VCEsat Breakthrough In Small Signal (BISS) transistor

Product Overview

NXP Semiconductors

Datasheet Details

Part number	PBSS304NX
Manufacturer	NXP Semiconductors
File Size	252.51 KB
Description	NPN low VCEsat Breakthrough In Small Signal (BISS) transistor
Datasheet	PBSS304NX Datasheet
Additional preview pages of the PBSS304NX datasheet.

Product details

Description

NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package.

Features

Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3.

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Other Datasheets by NXP Semiconductors

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Published: Jan 11, 2010 |