PBSS4140DPN
FEATURES
- 600 m W total power dissipation
- Low collector-emitter saturation voltage
- High current capability
- Improved device reliability due to reduced heat generation
- Replaces two SOT23 packaged low VCEsat transistors on same PCB area
- Reduces required PCB area
- Reduced pick and place costs. APPLICATIONS
- General purpose switching and muting
- LCD backlighting
- Supply line switching circuits
- Battery driven equipment (mobile phones, video cameras and hand-held devices).
6 handbook, halfpage 5 4
QUICK REFERENCE DATA SYMBOL VCEO IC ICM TR1 TR2 RCEsat PINNING PIN 1, 4 2, 5 6, 3 emitter base collector DESCRIPTION
TR1; TR2 TR1; TR2 TR1; TR2 PARAMETER collector-emitter voltage peak collector current peak collector current NPN PNP equivalent on-resistance MAX. 40 1 2
- - <500 UNIT V A A
- - mΩ
DESCRIPTION
TR2
NPN/PNP low VCEsat transistor pair in an SC-74 (SOT457) plastic package.
1 2 3
MAM445
TR1
MARKING TYPE NUMBER PBSS4140DPN MARKING CODE M2...
