BUK9006-55A datasheet, transistor equivalent, NXP Semiconductors

BUK9006-55A transistor equivalent, n-channel enhancement mode field-effect power transistor.

Features and benefits

s 25 A testing of individual die s Inductive energy testing of individual die s Life-tested to Q101 at 175 °C s Automatic visual inspection. 1.3 Applications s Automotiv.

Application

s Automotive systems s Motors, lamps and solenoids s 12 V and 24 V loads s General purpose power switching. 1.4 Quick r.

Description

N-channel enhancement mode ﬁeld-effect power transistor available as a bare die using Philips General Purpose Automotive (GPA) TrenchMOS™ technology. Product availability: BUK9006-55A distributed as individual die on reel. 1.2 Features s 25 A testin.

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