BUK9107-55ATE datasheet, fet equivalent, NXP

Features and benefits

* Allows responsive temperature monitoring due to integrated temperature sensor
* Q101 compliant
* Electrostatically robust due to integrated protection diod.

Application

1.2 Features and benefits
* Allows responsive temperature monitoring due to integrated temperature sensor
* Q1.

Description

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. The devices include TrenchPLUS diodes for ElectroStatic Discharge (ESD) protection and temperature sensing. This product has been de.

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