BLL6H1214-500 - LDMOS L-band radar power transistor

NXP Semiconductors

Datasheet Details

Part number	BLL6H1214-500
Manufacturer	NXP Semiconductors
File Size	227.88 KB
Description	LDMOS L-band radar power transistor
Datasheet	BLL6H1214-500_NXPSemiconductors.pdf

500 W LDMOS power transistor intended for L-band radar applications in the 1.2 GHz to 1.4 GHz range.

Typical pulsed RF performance at a frequency of 1.2 GHz to 1.4 GHz, a supply voltage of 50 V, an IDq of 150 mA, a tp of 300 μs with δ of 10 %: Output power = 500 W Power gain = 17 dB Efficiency = 50 %.
Easy power control.
Integrated ESD protection.
High flexibility with respect to pulse formats.
Excellent ruggedness.
High efficiency.
Excellent thermal stability.
Designed for broadband operation (1.2 GHz to 1.4 GHz).

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Published: Jun 18, 2010 |