BLL6H1214-500 - LDMOS L-band radar power transistor

Description

500 W LDMOS power transistor intended for L-band radar applications in the 1.2 GHz to 1.4 GHz range.

Table 1.

Test information Typical RF performance at Tcase = 25 °C; tp = 300 μs; δ = 10 %; IDq = 150 mA; in a class-AB production test circuit.

Features

• Typical pulsed RF performance at a frequency of 1.2 GHz to 1.4 GHz, a supply voltage of 50 V, an IDq of 150 mA, a tp of 300 μs with δ of 10 %: ‹ Output power = 500 W ‹ Power gain = 17 dB ‹ Efficiency = 50 %.
• Easy power control.
• Integrated ESD protection.
• High flexibility with respect to pulse formats.
• Excellent ruggedness.
• High efficiency.
• Excellent thermal stability.
• Designed for broadband operation (1.2 GHz to 1.4 GHz).