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BLL6H1214-500 Datasheet, NXP Semiconductors

BLL6H1214-500 transistor equivalent, ldmos l-band radar power transistor.

BLL6H1214-500 Avg. rating / M : 1.0 rating-11

datasheet Download (Size : 227.88KB)

BLL6H1214-500 Datasheet
BLL6H1214-500
Avg. rating / M : 1.0 rating-11

datasheet Download (Size : 227.88KB)

BLL6H1214-500 Datasheet

Features and benefits


* Typical pulsed RF performance at a frequency of 1.2 GHz to 1.4 GHz, a supply voltage of 50 V, an IDq of 150 mA, a tp of 300 μs with δ of 10 %: ‹ Output power = 500 .

Application

in the 1.2 GHz to 1.4 GHz range. Table 1. Test information Typical RF performance at Tcase = 25 °C; tp = 300 μs; δ = 10 .

Description

500 W LDMOS power transistor intended for L-band radar applications in the 1.2 GHz to 1.4 GHz range. Table 1. Test information Typical RF performance at Tcase = 25 °C; tp = 300 μs; δ = 10 %; IDq = 150 mA; in a class-AB production test circuit. Mode o.

Image gallery

BLL6H1214-500 Page 1 BLL6H1214-500 Page 2 BLL6H1214-500 Page 3

TAGS

BLL6H1214-500
LDMOS
L-band
radar
power
transistor
NXP Semiconductors

Manufacturer


NXP (https://www.nxp.com/) Semiconductors

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