Datasheet Details
| Part number | BLL6H1214LS-250 |
|---|---|
| Manufacturer | Ampleon |
| File Size | 354.19 KB |
| Description | LDMOS L-band radar power transistor |
| Datasheet |
 BLL6H1214LS-250 Datasheet
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Description
250 W LDMOS power transistor intended for L-band radar applications in the 1.2 GHz to 1.4 GHz range.
Table 1.
Test information Typical RF performance at Tcase = 25 C; tp = 300 s; = 10 %; IDq = 100 mA; in a class-AB production test circuit.
Features
- Typical pulsed RF performance at a frequency of 1.2 GHz to 1.4 GHz, a supply voltage of 50 V, an IDq of 100 mA, a tp of 300 s with of 10 %:.
- Output power = 250 W.
- Power gain = 17 dB.
- Efficiency = 55 %.
- Easy power control.
- Integrated ESD protection.
- High flexibility with r.