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BLL6H1214L-250 - LDMOS L-band Radar Power Transistor

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NXP

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BLL6H1214L-250 LDMOS L-band Radar Power Transistor by NXP - Datasheet Preview — Datasheet preview – BLL6H1214L-250

Datasheet Details

Part number	BLL6H1214L-250
Manufacturer	NXP
File Size	168.65 KB
Description	LDMOS L-band Radar Power Transistor
Datasheet	BLL6H1214L-250 Datasheet
Additional preview pages of the BLL6H1214L-250 datasheet.

Product details

Description

250 W LDMOS power transistor intended for L-band radar applications in the 1.2 GHz to 1.4 GHz range.

Features

Typical pulsed RF performance at a frequency of 1.2 GHz to 1.4 GHz, a supply voltage of 50 V, an IDq of 100 mA, a tp of 500 μs with δ of 20 %: Output power = 250 W Power gain = 17 dB Efficiency = 55 %.
Easy power control.
Integrated ESD protection.
High flexibility with respect to pulse formats.
Excellent ruggedness.
High efficiency.
Excellent thermal stability.
Designed for broadband operation (1.2 GHz to 1.4 GHz).

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Published: Jan 18, 2010 |