BLL6H1214L-250 Datasheet LDMOS L-band Radar Power Transistor

Manufacturer: NXP Semiconductors

Datasheet Details

Part number	BLL6H1214L-250
Manufacturer	NXP Semiconductors
File Size	168.65 KB
Description	LDMOS L-band Radar Power Transistor
Datasheet	BLL6H1214L-250 Datasheet

250 W LDMOS power transistor intended for L-band radar applications in the 1.2 GHz to 1.4 GHz range.

Table 1.

Test information Typical RF performance at Tcase = 25 °C;

BLL6H1214L-250; BLL6H1214LS-250 LDMOS L-band radar power transistor Rev.

01 — 11 December 2009 Objective data sheet 1.

Product profile 1.

Typical pulsed RF performance at a frequency of 1.2 GHz to 1.4 GHz, a supply voltage of 50 V, an IDq of 100 mA, a tp of 500 μs with δ of 20 %: Output power = 250 W Power gain = 17 dB Efficiency = 55 %.
Easy power control.
Integrated ESD protection.
High flexibility with respect to pulse formats.
Excellent ruggedness.
High efficiency.
Excellent thermal stability.
Designed for broadband operation (1.2 GHz to 1.4 GHz).

Brand Logo	Part Number	Description	Manufacturer
	BLL6H1214L-250	LDMOS L-band radar power transistor	Ampleon

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