logo

BLF878 Datasheet, NXP Semiconductors

BLF878 transistor equivalent, uhf power ldmos transistor.

BLF878 Avg. rating / M : 1.0 rating-112

datasheet Download (Size : 182.68KB)

BLF878 Datasheet

Features and benefits

I 2-Tone performance at 860 MHz, a drain-source voltage VDS of 42 V and a quiescent drain current IDq = 1.4 A: N Peak envelope power load power = 300 W N Power gain = 21 .

Application

and industrial applications. The transistor can deliver 300 W broadband over the full UHF band from 470 MHz to 860 MHz. .

Description

A 300 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor can deliver 300 W broadband over the full UHF band from 470 MHz to 860 MHz. The excellent ruggedness and broadband performance of thi.

Image gallery

BLF878 Page 1 BLF878 Page 2 BLF878 Page 3

TAGS

BLF878
UHF
power
LDMOS
transistor
NXP Semiconductors

Manufacturer


NXP (https://www.nxp.com/) Semiconductors

Related datasheet

BLF871

BLF871S

BLF872

BLF879P

BLF879PS

BLF820

BLF861

BLF861A

BLF881

BLF881S

BLF882

BLF882S

BLF884P

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts