BLF871S transistor equivalent, uhf power ldmos transistor.
* 2-tone performance at 860 MHz, a drain-source voltage VDS of 40 V and a quiescent drain current IDq = 0.5 A: Peak envelope power load power = 100 W Power gain =.
and industrial applications. The transistor can deliver 100 W broadband from HF to 1 GHz. The excellent ruggedness and b.
A 100 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor can deliver 100 W broadband from HF to 1 GHz. The excellent ruggedness and broadband performance of this device makes it ideal for di.
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