BLF871 - UHF power LDMOS transistor

Description

A 100 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications.

The transistor can deliver 100 W broadband from HF to 1 GHz.

The excellent ruggedness and broadband performance of this device makes it ideal for digital transmitter applications.

Features

• 2-tone performance at 860 MHz, a drain-source voltage VDS of 40 V and a quiescent drain current IDq = 0.5 A: ‹ Peak envelope power load power = 100 W ‹ Power gain = 21 dB ‹ Drain efficiency = 47 % ‹ Third order intermodulation distortion =.
• 35 dBc.
• DVB performance at 858 MHz, a drain-source voltage VDS of 40 V and a quiescent drain current IDq = 0.5 A: ‹ Average output power = 24 W ‹ Power gain = 22 dB ‹ Drain efficiency = 33 % ‹ Third order intermodulation distortion.