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BLF7G22LS-130 Datasheet, NXP Semiconductors

BLF7G22LS-130 transistor equivalent, power ldmos transistor.

BLF7G22LS-130 Avg. rating / M : 1.0 rating-11

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BLF7G22LS-130 Datasheet

Features and benefits


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* Excellent ruggedness High efficiency Low Rth providing excellent thermal stability Designed for broadband operation .

Application

at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 °C in a comm.

Description

130 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 °C in a common source class-AB production test circuit. Mode of operation 2-carrier.

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BLF7G22LS-130 Page 1 BLF7G22LS-130 Page 2 BLF7G22LS-130 Page 3

TAGS

BLF7G22LS-130
Power
LDMOS
transistor
NXP Semiconductors

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