BLF7G22LS-250P transistor equivalent, power ldmos transistor.
* Excellent ruggedness
* High efficiency
* Low Rth providing excellent thermal stability
* Designed for low memory effects providing excellent pre-distort.
at frequencies from 2110 MHz to 2170 MHz.
Table 1. Typical performance
Typical RF performance at Tcase = 25 C in a co.
250 W LDMOS power transistor for base station applications at frequencies from 2110 MHz to 2170 MHz.
Table 1. Typical performance
Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit.
Mode of operation
f
ID.
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