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BLF7G22L-250P Datasheet, NXP

BLF7G22L-250P transistor equivalent, power ldmos transistor.

BLF7G22L-250P Avg. rating / M : 1.0 rating-11

datasheet Download (Size : 128.56KB)

BLF7G22L-250P Datasheet
BLF7G22L-250P Avg. rating / M : 1.0 rating-11

datasheet Download (Size : 128.56KB)

BLF7G22L-250P Datasheet

Features and benefits


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* Excellent ruggedness High efficiency Low Rth providing excellent thermal stability Designed for broadband operation .

Application

at frequencies from 2110 MHz to 2170 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 °C in a comm.

Description

250 W LDMOS power transistor for base station applications at frequencies from 2110 MHz to 2170 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 °C in a common source class-AB production test circuit. Mode of operation 2-carrier.

Image gallery

BLF7G22L-250P Page 1 BLF7G22L-250P Page 2 BLF7G22L-250P Page 3

TAGS

BLF7G22L-250P
Power
LDMOS
transistor
NXP

Manufacturer


NXP (https://www.nxp.com/)

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